发明名称 EXPOSURE METHOD, EXPOSURE DEVICE AND MANUFACTURING METHOD OF DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a high exposure quantity on the surface of a work (wafer or the like) as an object of exposure when an optical member which changes gradually in transmittance or reflectance is used in an optical system. SOLUTION: In an exposure method in which a wafer 14 is exposed to light through the intermediary of a reticle 11 and a projection optical system 13 by the use of a pulse illuminating light IL as an exposure beam, a correlation between the volume of illuminating light detected through a beam splitter 7 located on an optical path to a reticle 11 and the volume of illuminating light on the wafer 14 are previously obtained. A variation of transmission in the projection optical system 13 is estimated corresponding to process conditions and the progress of exposure when the integrated exposure light volume of the wafer 14 is controlled resting on a light volume detected through the intermediary of the beam splitter 7 and its correlation, and the above correlation is corrected resin on the estimated variation of transmission.
申请公布号 JP2001267239(A) 申请公布日期 2001.09.28
申请号 JP20000178982 申请日期 2000.06.14
申请人 NIKON CORP 发明人 OZAWA KEN
分类号 G03B27/72;G03F7/20;G03F7/22;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03B27/72
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