| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device where a flat STI region without containing any divots at the corner part of the STI region is formed. SOLUTION: A process for forming a lamination film on the surface of a substrate is included, and the lamination film consists of oxide, polysilicon, and nitride layers (a). A process for allowing the lamination film to be subjected to patterning to form a trench in the substrate is included, and the patterning exposes the side walls of the oxide, polysilicon, and nitride layers (b). A process for oxidizing the trench and the exposed side wall of the oxide and polysilicon layers to allow a conformal oxide layer to be subjected to thermo-growth in the trench and on the exposed side wall of the oxide and polysilicon layers (c), a process for filling the trench with a trench dielectric material (d), and a process for flattening up to the surface of the substrate (e), are included.
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