| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration of transistor characteristics due to crystallinity of poloysilicon film quantity in the reverse staggered-type transistor structure of low-temperature polysilicon. SOLUTION: An embedded gate electrode 3 is embedded in an oxide film 2, so that the film thickness of amorphous Si 5 can be fixed at carrying out excimer laser irradiation, for forming a reverse staggered-type transistor. Then, a polysilicon film 7 is formed by carrying out the excimer laser irradiation, while the film thickness of the a-Si 5 remains fixed. Also, the cross section of the embedded gate electrode 3 is formed into a rectangular shape or reverse taper shape, so that the crystallinity of polysilicon at a gate edge part can be smoothly changed, and that transistor characteristics can be improved.
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