发明名称 |
Semi-insulating silicon carbide without vanadium domination |
摘要 |
A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 OMEGA-cm at room temperature and a concentration of trapping elements that create states at least 700 meV from the valence or conduction band that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.
|
申请公布号 |
US2001023945(A1) |
申请公布日期 |
2001.09.27 |
申请号 |
US20010866129 |
申请日期 |
2001.05.25 |
申请人 |
CARTER CALVIN H.;BRADY MARK;TSVETKOV VALERI F. |
发明人 |
CARTER CALVIN H.;BRADY MARK;TSVETKOV VALERI F.;MUELLER STEPHAN;HOBGOOD HUDSON M |
分类号 |
C30B29/36;C30B23/00;C30B33/00;H01L21/338;H01L29/161;H01L29/24;H01L29/778;H01L29/78;H01L29/812;(IPC1-7):H01L31/031 |
主分类号 |
C30B29/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|