| 摘要 |
<p>The invention provides a variable-wavelength light-emitting module. A light-emitting module includes a light-emitting semiconductor device (16), first and second photodetectors (20), and an etalon (18). The light-emitting semiconductor device (16) includes a first end face (16b) and a second end face (16a), and an active layer between the first end face (16b) and the second end face (16a). The photodetectors (20a, 20b) are arranged to receive light passing through the first end face (16b) of the light-emitting semiconductor device. The etalon (18) includes a part of a first thickness d1 located between the first end face (16b) and the photodetector (20a), and another part of a second thickness d2 located between the first end face (16b) and the photodetector (20b). The first thickness d1 of the etalon (18) differs from the second thickness 2d.</p> |
