METHOD OF MANUFACTURING SEMICONDUCTOR AND MANUFACTURING APPARATUS

摘要

[OBJECT] To provide a method of manufacturing semiconductor and a semiconductor manufacturing apparatus used for it which has an excellent step coverage, a high film-forming rate, and an excellent uniformity in film-forming rate and an excellent sheet resistivity on a wafer surface, and in which a CVD film is formed for every wafer with good reproducibility. [CONSTITUTION] In a processing chamber where the pressure is maintained at 1,000 to 50,000 Pa, a wafer is placed on a susceptor and heated at over 500 DEG C by a planar heater via the susceptor. Then, a film is deposited on the wafer while a material gas is supplied at 500-50,000 sccm into the chamber through a plurality of gas injecting holes provided in the vicinity of the center of a shower plate which is provided in parallel to the wafer with a spacing of 1-20 mm and the temperature of which is maintained below 200 DEG C.