| 摘要 |
PURPOSE: A semiconductor device, a manufacturing method thereof, a method for manufacturing a light valve using the same, and an image projection apparatus are provided to be capable of effectively restraining the generation of a parasitic channel and preventing the leakage of current. CONSTITUTION: A semiconductor device is provided with an insulating part(1) and a mono silicon layer(2) formed on the insulating part. At this time, the mono silicon layer includes at least one integrated circuit. The semiconductor device further includes an inactive layer(7) for coating at least one integrated circuit, an adhesive layer(5) formed on the inactive layer, and a support part(6) formed on the resultant structure for supporting the mono silicon layer. Preferably, the semiconductor device is divided into a pixel switching device portion(8) and a driving integrated circuit portion(9).
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