发明名称 |
Ion plating device and ion plating method |
摘要 |
In ion plating in which a substrate is held on a substrate holder placed in an evacuated vacuum chamber and plasma is generated in the vacuum chamber to be formed into a film, a bias voltage composed of a negative bias component having a predetermined negative voltage value for a predetermined output time and a pulse bias component corresponding to a pulse output having a constant positive value for a predetermined time and output with a cycle set in the rage of 1 kHz-1 GHz is supplied to the inside of the vacuum chamber through the substrate holder by a power supply unit.
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申请公布号 |
US2001023822(A1) |
申请公布日期 |
2001.09.27 |
申请号 |
US20010812668 |
申请日期 |
2001.03.20 |
申请人 |
KOIZUMI YASUHIRO;NOSE KOUICHI;TOKOMOTO ISAO |
发明人 |
KOIZUMI YASUHIRO;NOSE KOUICHI;TOKOMOTO ISAO |
分类号 |
B01J19/08;C23C14/32;C23C14/48;H01J37/32;(IPC1-7):C23C14/34 |
主分类号 |
B01J19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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