Bar-type field effect transistor (FET) used in electronic devices comprises a bar formed on a substrate, and a gate and a spacer formed over part of the bar

摘要

Bar-type field effect transistor comprises a bar (103) formed on a substrate (101); and a gate (104) and a spacer (107, 108) formed over part of the bar. An Independent claim is also included for a process for the production of the bar-type field effect transistor comprising: (a) forming a bar on the substrate; (b) forming a gate layer over the substrate and over a part of the bar; (c) forming an insulating layer over the gate layer; (d) partially removing the gate layer below the insulating layer; and (e) forming a spacer below the insulating layer.