| 摘要 |
PROBLEM TO BE SOLVED: To lessen defects on the crystal surface to improve the adhesion of electrodes. SOLUTION: On an n-type GaAs substrate 11, there are formed an n-type AlGaInP lower clad layer 12, A1GaInP active layer 13, p-type AlGaInP upper clad layer 14, p-type A1GaInP intermediate layer 15 (lattice matching ratio Δa/a to GaAs is -3.3%), p-type AlGaInP current diffused layer 16, p-type electrode 17 and n-type electrode 18. The lattice matching ratio Δa/a of the intermediate layer 15 is set to -3.3% less than -2.5% to reduce the crystal defect number on the crystal surface to 20 defects or less per LED, and as the result, the adhesion the p-type electrode 17 formed on the current diffused layer 16 can be improved as well as the production yield. |
