METHOD FOR FORMING POLYSILICON-POLYSILICON CAPACITOR, MOS TRANSISTOR, AND BIPOLAR TRANSISTOR SIMULTANROUSLY

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a polysilicon-polysilicon capacitor for use in a CMOS or BiCMOS integrated circuit simply and inexpensively. SOLUTION: The method for forming a polysilicon-polysilicon capacitor 49, an MOS transistor 18, and a bipolar transistor 48 simultaneously on a substrate 10 comprises a step for forming a first polysilicon layer on the substrate 10 and patterning it in order to form the first plate electrode of the capacitor 49 and the electrode of the MOS transistor 18, and a step for forming a second polysilicon layer on the substrate 10 and patterning it in order to form the second plate electrode of the capacitor 49 and the electrode of the bipolar transistor 48.