发明名称 |
Method of optical proximity correction |
摘要 |
A method of optical proximity correction. A main pattern is provided. The main pattern has a critical dimension. When the critical dimension is reduced to reach a first reference value or below, a serif/hammerhead is added onto the main pattern. When the critical dimension is further reduced to a second reference value or below, an assist feature is added onto the main pattern. The corrected pattern is then transferred to a layer on wafer with an improved fidelity.
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申请公布号 |
US2001024760(A1) |
申请公布日期 |
2001.09.27 |
申请号 |
US20010872411 |
申请日期 |
2001.06.01 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIN CHIN-LUNG |
分类号 |
G03F1/14;G03F7/20;(IPC1-7):G03C5/00 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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