| 摘要 |
<p>A method for forming a semiconductor device including a die attach surface having a first pedestal (90) and a first semiconductor die (80) having a first surface formed with a first cavity (74) for mounting the first semiconductor die on the first pedestal. Further provision is made for the formation of a dielectric cavity (92) in the semiconductor die, the first pedestal or both. The cavity allows for fields produced by electronic components disposed on the upper surface of the semiconductor die to penetrate into the dielectric cavity. Inclusion of a second pedestal on a common die attach surface and a second semiconductor die having a second cavity for mounting provides for substantially coplanar precision alignment or the first and second semiconductor die.</p> |
