Semiconductor integrated circuit device and a method of manufacturing thereof

摘要

A gate electrode of a field-effect transistor used as a peripheral circuit is constituted by the same gate electrode structure as a double-level gate electrode structure of nonvolatile memory cells, and a contact hole for connecting those conductive films constituting the gate electrode is provided at a location which two-dimensionally overlaps an active area within a plane of the gate electrode. A hole for connecting between the two layers of the gate electrode of a first field-effect transistor used as perpheral circuit is provided at a location which two-dimensionally overlaps the active area within the plane of the gate electrode, and a hole for connecting between the two layers of the gate electrode of a second field-effect transistor used as a peripheral circuit is provided at a location which two-dimensionally overlaps an isolation area within the plane of the gate electrode. The gate length of the first field-effect transistor is longer than the gate length of the second field-effect transistor, and the gate width of the first field-effect transistor is wider than the gate width of the second field-effect transistor.