发明名称 |
Plasma-assisted dry etching of noble metal-based materials |
摘要 |
A process for removing and/or dry etching noble metal-based material structures, e.g., iridium for electrode formation for a microelectronic device. Etch species are provided by plasma formation involving energization of one or more halogenated organic and/or inorganic substance, and the etchant medium including such etch species and oxidizing gas is contacted with the noble metal-based material under etching conditions. The plasma formation and the contacting of the plasma with the noble metal-based material can be carried out in a downstream microwave processing system to provide processing suitable for high-rate fabrication of microelectronic devices and precursor structures in which the noble metal forms an electrode, or other conductive element or feature of the product article.
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申请公布号 |
US2001024679(A1) |
申请公布日期 |
2001.09.27 |
申请号 |
US20010874102 |
申请日期 |
2001.06.05 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS INC. |
发明人 |
BAUM THOMAS H.;CHEN PHILLIP;DIMEO FRANK;VAN BUSKIRK PETER C.;KIRLIN PETER S. |
分类号 |
C07F15/00;C23C16/18;C23C16/40;C23F1/30;C30B25/02;H01L21/02;H01L21/3213;(IPC1-7):B05D3/00;B05D5/12;C23F1/00 |
主分类号 |
C07F15/00 |
代理机构 |
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