发明名称 |
Novel flash integrated circuit and its method of fabrication |
摘要 |
A method of fabricating a flash memory integrated circuit is described. In an embodiment of the present invention a dielectric filled trench isolation region is formed in a silicon substrate. The dielectric filled trench isolation region isolates a first portion of the silicon substrate from a second portion of the silicon substrate. A portion of the dielectric in the trench is then removed to reveal a portion of the silicon substrate in the trench between the first and second portions of the silicon substrate. Ions are then implanted to form a first source region in the first portion of the silicon substrate and to form a second source region in the second portion of the silicon substrate and to form a doped region in the revealed silicon substrate in the trench wherein the doped region in the trench extends from the first doped source region to the second doped source region.
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申请公布号 |
US2001024857(A1) |
申请公布日期 |
2001.09.27 |
申请号 |
US20010865006 |
申请日期 |
2001.05.23 |
申请人 |
PARAT KRISHNA;GIRIDHAR RAGHUPATHY V.;HU CHENG C.;XU DANIEL;KIM YUDONG;WADA GLEN |
发明人 |
PARAT KRISHNA;GIRIDHAR RAGHUPATHY V.;HU CHENG C.;XU DANIEL;KIM YUDONG;WADA GLEN |
分类号 |
H01L21/336;H01L21/425;H01L21/8247;H01L27/105;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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