| 摘要 |
<p>A method of forming a low temperature metal bond includes the steps of providing a donor substrate (22), such as a crystallographically oriented donor substrate. A thin film is grown on the surface of the donor substrate. The thin film may be an nitride, oxide or Perovskite. An acceptor substrate is then produced. The acceptor substrate may be Si, GaAs, polymers, such as polyamide, or stainless steel. A multi-layer metal bond interface for positioning between the thin film and the acceptor substrate is then selected (24). A bonded layer is then formed, at a temperature below 200 degrees C, between the thin film and the acceptor substrate using the multi-layer metal bond interface (26). The donor substrate is then severed from the thin film to isolate the thin film for subsequent processing (60).</p> |
