发明名称 |
Microelectronic structure and method of fabricating it |
摘要 |
A microelectronic structure has an adhesion layer which is disposed between a base substrate and a barrier layer. The adhesion layer improves the adhesion of the barrier layer on the base substrate, in particular to insulation layers provided there. Microelectronic structures of this type are preferably used in semiconductor memories. A method of fabricating such a microelectronic structure is also provided.
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申请公布号 |
US2001024868(A1) |
申请公布日期 |
2001.09.27 |
申请号 |
US20000729069 |
申请日期 |
2000.12.04 |
申请人 |
NAGEL NICOLAS;PRIMIG ROBERT;KASKO IGOR;BRUCHHAUS RAINER |
发明人 |
NAGEL NICOLAS;PRIMIG ROBERT;KASKO IGOR;BRUCHHAUS RAINER |
分类号 |
H01L21/02;H01L21/285;H01L21/8242;(IPC1-7):C30B1/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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