| 发明名称 |
Semiconductor substrate processing apparatus and method |
| 摘要 |
This invention relates to a semiconductor substrate processing apparatus and method for forming interconnects by filling a circuit pattern groove and/or a hole formed in a semiconductor substrate with a plated metal film, and removing the plated metal film while leaving the metal film at the filled portion. The apparatus comprises a carry-in and carry-out section for carrying in and carrying out a semiconductor substrate, which has a circuit formed on a surface thereof, in a dry state; a plated metal film forming unit for forming a plated metal film on the semiconductor substrate which has been carried in; a bevel etching unit for etching a peripheral edge portion of the semiconductor substrate; a polishing unit for polishing at least part of the plated metal film on the semiconductor substrate; and a transport mechanism for transporting the semiconductor substrate between the above units.
|
| 申请公布号 |
US2001024691(A1) |
申请公布日期 |
2001.09.27 |
| 申请号 |
US20010742386 |
申请日期 |
2001.05.25 |
| 申请人 |
KIMURA NORIO;MISHIMA KOJI;KUNISAWA JUNJI;ODAGAKI MITSUKO;MAKINO NATSUKI;TSUJIMURA MANABU;INOUE HIROAKI;NAKAMURA KENJI;MATSUMOTO MORIJI;MATSUDA TETSUO;KANEKO HISASHI;MORITA TOSHIYUKI;HAYASAKA NOBUO;OKUMURA KATSUYA |
发明人 |
KIMURA NORIO;MISHIMA KOJI;KUNISAWA JUNJI;ODAGAKI MITSUKO;MAKINO NATSUKI;TSUJIMURA MANABU;INOUE HIROAKI;NAKAMURA KENJI;MATSUMOTO MORIJI;MATSUDA TETSUO;KANEKO HISASHI;MORITA TOSHIYUKI;HAYASAKA NOBUO;OKUMURA KATSUYA |
| 分类号 |
B24B37/04;C23C18/16;C25D7/12;C25D17/12;C25D17/14;H01L21/00;H01L21/02;H01L21/288;H01L21/306;H01L21/321;H01L21/3213;H01L21/677;H01L21/768;H05K3/42;(IPC1-7):B05D3/12 |
主分类号 |
B24B37/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
