| 摘要 |
The device has a semiconductor substrate of a first conductivity type, on which a more lightly doped semiconductor layer of an opposite, second conductivity type or of the first conductivity type is arranged in the form of a drift segment (1) for taking up the blocking voltage of the semiconductor device. In the drift segment, laterally aligned semiconductor regions (3,4;3'4') of first and second conductivity type are alternately arranged. The semiconductor regions (3,3') of the first conductivity type are connected to the semiconductor substrate, on which a first electrode (D;S) is arranged, by an electrically conductive connection (5,5') fed through the semiconductor layer (2,2'). The semiconductor regions (4,4') of the second conductivity type are connected to a second electrode (S,D) on the semiconductor layer by a further conductive connection (6,6') fed through the semiconductor regions (3,4;3',4').
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