Vertical resonator laser diode comprises a first electrical connecting contact joined to a first Bragg reflector layer sequence, and a second electrical connecting contact

摘要

Vertical resonator laser diode comprises a first electrical connecting contact (7) joined to a first Bragg reflector layer sequence facing the main surface; and a second electrical connecting contact (8) joined to a second Bragg reflector layer sequence (2) facing the main surface by a contacting zone (6) of relatively high electrical conductivity extending from the main surface up to at least the pn-junction. The contacting zone is electrically insulated from the first Bragg reflector layer sequence by an insulating zone (5). An Independent claim is also included for a process for the production of a vertical resonator laser diode. Preferably the insulation zone is produced by vertically structuring a trench between the contacting zone and the first Bragg reflector layer sequence, and filling the trench with an electrically insulating material. The diode is based on III-V semiconductor material.