发明名称 |
SURFACE ACOUSTIC WAVE ELEMENT |
摘要 |
A surface acoustic wave element suitable for mass-production, and excellent in operation characteristics in a high frequency region, the element comprising a diamond layer (3), a tz-thick ZnO layer (4) formed on the diamond layer (3), interdigital electrodes (5) formed on the ZnO layer (4), for exciting and receiving a surface acoustic wave, and a tS-thick SiO2 layer (6) covering th e interdigital electrodes (5) and formed on the ZnO layer (4), wherein kh1 and kh2 given by kh1 = 3.2 .pi..(tz / .lambda.), kh2 = 3.2 .pi..(tS / .lambda.) are given in a constant numeric value range (.lambda.; wavelength of seconda ry- mode surface acoustic wave), and a triple harmonics of an excited second-mod e surface acoustic wave is used.
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申请公布号 |
CA2401050(A1) |
申请公布日期 |
2001.09.27 |
申请号 |
CA20012401050 |
申请日期 |
2001.03.19 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAKAHATA, HIDEAKI;HACHIGO, AKIHIRO;ITAKURA, KATSUHIRO;SHIKATA, SHINICHI;FUJII, SATOSHI |
分类号 |
H03H9/02;(IPC1-7):H03H9/25 |
主分类号 |
H03H9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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