A DUAL SPACER PROCESS FOR NON-VOLATILE MEMORY DEVICES

摘要

In a two-step spacer fabrication process for a non-volatile memory device (1), a thin oxide layer (12) is deposited on a wafer substrate (3) leaving a gap in the core (24) of the non-volatile memory device (1). Implantation and/or oxide-nitride-oxide removal can be accomplished through this gap. After implantation, a second spacer (13) is deposited. After the second spacer deposition, a periphery spacer etch is performed. By the above method, a spacer is formed.