发明名称 System and method for fabricating logic devices comprising carbon nanotube transistors
摘要 Carbon nanotube devices and methods for fabricating these devices, wherein in one embodiment, the fabrication process consists of the following process steps: (1) generation of a template, (2) catalyst deposition, and (3) nanotube synthesis within the template. In another embodiment, a carbon nanotube transistor comprises a carbon nanotube having two or more defects, wherein the defects divide the carbon nanotube into three regions having differing conductivities. The defects may be introduced by varying the diameter of a template in which the carbon nanotube is fabricated and thereby causing pentagon-heptagon pairs which form the defects.
申请公布号 US2001023986(A1) 申请公布日期 2001.09.27
申请号 US20010779374 申请日期 2001.02.07
申请人 MANCEVSKI VLADIMIR 发明人 MANCEVSKI VLADIMIR
分类号 G11C13/02;G11C23/00;H01L51/30;(IPC1-7):H01L51/40;H01L23/52 主分类号 G11C13/02
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