发明名称 The thin layer system is formed using a substrate which is supplied with a bias voltage while the layers of different materials are sputtered on to it in sequence to give smooth surfaces and a thin interdiffusion zone between them
摘要 To form a thin layer system with at least two layers of different materials, they are developed over each other by sputtering on to a substrate which has an applied bias voltage. The bias voltage is varied at the substrate while at least one layer is deposited, according to the layer thickness. The two materials for the layers are molybdenum and silicon. The bias voltage is varied at 0-200 V.
申请公布号 DE10011649(C1) 申请公布日期 2001.09.27
申请号 DE20001011649 申请日期 2000.02.28
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. 发明人 FEIGL, TORSTEN;YULIN, SERGEY;STOECKL, WIELAND;KAISER, NORBERT
分类号 C23C14/34;(IPC1-7):C23C14/54 主分类号 C23C14/34
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