发明名称 |
LATERAL ASYMMETRIC LIGHTLY DOPED DRAIN MOSFET |
摘要 |
<p>A lateral, asymmetric lightly doped drain MOSFET that allows for a higher packing density, reduced on-resistance and protection from voltage punch through and many short channel effects. The lateral, asymmetric lightly doped drain MOSFET includes a semiconductor surface having a first surface and a second surface, a substantially uniformly doped source region disposed at the first surface of the substrate, a drain region disposed at the first surface of the substrate defining a channel region between the source region and the drain region, a gate dielectric material disposed on the first surface of the semiconductor and a gate disposed atop the gate dielectric material. The drain region includes a first doped section and a second doped section. The second doped section is located adjacent to the channel region and is more lightly doped than the first doped section of the drain region.</p> |
申请公布号 |
WO0171804(A2) |
申请公布日期 |
2001.09.27 |
申请号 |
WO2001US08452 |
申请日期 |
2001.03.16 |
申请人 |
THE PROCTER &, GAMBLE COMPANY |
发明人 |
XU, YING;NEBRIGIC, DRAGAN, DANILO |
分类号 |
H01L21/336;H01L21/8238;H01L29/78;(IPC1-7):H01L23/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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