发明名称 |
Method for fabricating semiconductor components |
摘要 |
Disclosed is a method for producing semiconductor elements including a metal layer (10) configured on a semiconductor substrate (5). The inventive method consists of the following steps: a silicon layer (15) is deposited on a metal layer (10); an etch mask is applied in order to structure the silicon layer (1%); the silicon layer is selectively etched (15) using the etch mask (25); and the metal layer (10) is structured in an etching process using a selectively etched silicon layer (15) as a hard mask.
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申请公布号 |
US2001024873(A1) |
申请公布日期 |
2001.09.27 |
申请号 |
US20000751961 |
申请日期 |
2000.12.29 |
申请人 |
ROHR THOMAS;DEHM CHRISTINE;MAZURE-ESPEJO CARLOS |
发明人 |
ROHR THOMAS;DEHM CHRISTINE;MAZURE-ESPEJO CARLOS |
分类号 |
H01L21/3065;H01L21/02;H01L21/3213;H01L21/8242;H01L27/108;(IPC1-7):H01L21/476;H01L23/48 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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