Multilayer copper interconnect structure with copper oxide portions and manufacturing method thereof

摘要

There is presented a semiconductor device including multiple levels of copper interconnects; wherein the surface of a copper interconnect corresponding to at least one underlying layer of another copper interconnect layer is turned into copper oxide to a thickness of 30 nm or more by oxidation conducted at the oxidation rate of 20 nm/min or less, and thereby the reflection of the exposure light from the lower-level copper interconnect is prevented, in forming by means of photolithography a trench to form a copper interconnect through damascening.