发明名称 |
SELECTIVE DEPOSITION METHOD OF CARBON NANO-TUBE |
摘要 |
PURPOSE: Provided is a selective deposition method of a carbon nano-tube which is based on plasma chemical vapor deposition method so that it uses CH4 gas to produce the carbon nano-tube on a substrate at 500-800deg.C selectively. CONSTITUTION: In the selective deposition method of the carbon nano-tube which utilizes the plasma chemical vapor deposition method, the formation method of the carbon nano-tube is characterized by forming a net between the substrate of a subject to be supported by the substrate and plasma and using hydrocarbon class gas with carbon included such as CH4, C2H2, C2H6, C3H8 or so on as a gas to generate plasma.
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申请公布号 |
KR20010088087(A) |
申请公布日期 |
2001.09.26 |
申请号 |
KR20000012099 |
申请日期 |
2000.03.10 |
申请人 |
JANG, JIN |
发明人 |
JANG, JIN;JUNG, SEOK JAE;LIM, SEONG HUN |
分类号 |
B82B3/00;(IPC1-7):B82B3/00 |
主分类号 |
B82B3/00 |
代理机构 |
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