ETCHING AGENT FOR COPPER, METHOD FOR MANUFACTURING SUBSTRATE FOR ELECTRONIC APERTURE USING THE SAME AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To obtain an etching agent which is capable of etching a copper film at a high etching rate by a simple chemical etching method of immersing the low-resistance copper film in a static state into an aqueous solution of an inexpensive and easily available reagent when this copper film is used as a wiring material and hardly gives rise to the occurrence of abnormal etching and pattern thinning. SOLUTION: The aqueous solution containing an oxidizing agent consisting of a hydrogen salt consisting of potassium bisulfate, sodium hydrogenesulfide, ammonium hydrogensulfide, ammonium dihydrogenphosphate or ammonium monohydrogenphosphate and hydrogen peroxide is used as the etching agent for copper.