发明名称 Cr-W ALLOY BASED SPUTTERING TARGET MATERIAL AND ITS PRODUCING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a Cr-W alloy based sputtering target material for stably depositing a substrate film for a liquid crystal display or a magnetic disk by which film characteristic of being high in strength and uniform can be obtained. SOLUTION: This Cr-W alloy based sputtering material has density of >=95% and deflective strength of >=450 N/mm2 and has a composition containing 5 to 40 at.% W, and the balance substantially Cr. Its structure is preferably composed of the three phases of a Cr phase, a W phase and a Cr-W alloy phase. The above target material can be obtained by using the powder of Cr and the powder of W as the main raw materials, mixing the powders, filling the powdery mixture into a capsule and thereafter performing hot isostatic pressing at >=1,000 deg.C under >=100 MPa.
申请公布号 JP2001262325(A) 申请公布日期 2001.09.26
申请号 JP20000069941 申请日期 2000.03.14
申请人 HITACHI METALS LTD 发明人 MURATA HIDEO
分类号 C23C14/34;G11B5/851;(IPC1-7):C23C14/34 主分类号 C23C14/34
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