发明名称 |
OPTOELECTRONIC MATERIAL, APPLIED ELEMENT THEREOF, AND METHOD FOR MANUFACTURING OPTHETOELECTRIC MATERIAL |
摘要 |
PURPOSE: To provide an optoelectronic material, for an applied element and a method for manufacturing the optoelectronic material, which has no deteriorations, etc., of emission characteristics in the atmosphere to obtain stable characteristics. CONSTITUTION: This optoelectronic material is composed of a porous silicon 12, and the surface of the porous silicon 12 is nitrided to form a silicon nitride film 13. Thus a stable light emission can be obtained, without having to oxidize the surface of the porous silicon 12.
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申请公布号 |
KR20010088335(A) |
申请公布日期 |
2001.09.26 |
申请号 |
KR20010007675 |
申请日期 |
2001.02.16 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ARAI TOSHIHIRO;KIMOTO KAZUHIKO;MAKINO TOSHIHARU;SUZUKI NOBUYASU;YAMADA YUKA;YOSHIDA TAKEHITO |
分类号 |
H05B33/14;B23K26/00;B23K26/12;B23K101/40;B82Y20/00;H01L21/203;H01L31/0248;H01L31/028;H01L31/09;H01L31/10;H01L33/34;H05B33/12;(IPC1-7):H01L33/00 |
主分类号 |
H05B33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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