发明名称 OPTOELECTRONIC MATERIAL, APPLIED ELEMENT THEREOF, AND METHOD FOR MANUFACTURING OPTHETOELECTRIC MATERIAL
摘要 PURPOSE: To provide an optoelectronic material, for an applied element and a method for manufacturing the optoelectronic material, which has no deteriorations, etc., of emission characteristics in the atmosphere to obtain stable characteristics. CONSTITUTION: This optoelectronic material is composed of a porous silicon 12, and the surface of the porous silicon 12 is nitrided to form a silicon nitride film 13. Thus a stable light emission can be obtained, without having to oxidize the surface of the porous silicon 12.
申请公布号 KR20010088335(A) 申请公布日期 2001.09.26
申请号 KR20010007675 申请日期 2001.02.16
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ARAI TOSHIHIRO;KIMOTO KAZUHIKO;MAKINO TOSHIHARU;SUZUKI NOBUYASU;YAMADA YUKA;YOSHIDA TAKEHITO
分类号 H05B33/14;B23K26/00;B23K26/12;B23K101/40;B82Y20/00;H01L21/203;H01L31/0248;H01L31/028;H01L31/09;H01L31/10;H01L33/34;H05B33/12;(IPC1-7):H01L33/00 主分类号 H05B33/14
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