发明名称 THIN FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a novel thin film synthetic method that does not require a high energy process. SOLUTION: A reaction solution is prepared by dissolving LiOH.H2O in distilled water to prepare an adjusting solution and adding Co metal powder in the adjusting solution. The reaction solution is charged into an autoclave to be kept at a prescribed temperature. Next, a pair of platinum electrodes is installed in the reaction solution and a prescribed voltage is impressed. As a result, a LiCoO2 thin film structured by containing Li, which is a constitutional element of the adjusting solution and Co, which is constitutional a element of the metal power, is synthesized and formed on an anodic electrode of the platinum electrode.
申请公布号 JP2001262396(A) 申请公布日期 2001.09.26
申请号 JP20000076578 申请日期 2000.03.17
申请人 TOKYO INST OF TECHNOL 发明人 YOSHIMURA MASAHIRO;FUJIWARA TAKESHI;SO JOEN;WATANABE TOMOSUKE;TERANISHI AKIRA;KYOO-SHON HAN
分类号 C25D15/02;C25D9/06;H01M4/131;H01M4/1391;H01M4/525 主分类号 C25D15/02
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