| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for epitaxial growth, which has an AlxGayInzN (x+y+z=1; x, y, z>=0) film being reduced in dislocation density and is capable of epitaxially growing an AlxGayInzN (x+y+z=1; x, y, z>=0) film having good characteristics on the formed film and to provide a method for efficiently producing such substrate for the epitaxial growth. SOLUTION: The AlxGayInzN film 27 is formed by forming striped grooves 24 or a striped metal film 31 in the back side 21b of a sapphire substrate body 21 by etching and then introducing the sapphire substrate body 21 into a CVD chamber 25 so that the back side 21b of the sapphire substrate body 21 is brought into contact with a heater. In this film forming process, the temperature at the striped areas having a pattern related to the striped pattern of the grooves 24 or the striped metal film 31 formed in the back side 21b of the sapphire substrate body 21 is selectively raised, and thereby the dislocation density at the surfaces of these areas is made extremely low. |
