| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved method by which the controlled growth of carbon nanotubes can be attained. SOLUTION: By this method, nanotubes vertically and analogously lined up on the local surface of a flat or nonflat substrate by the average deviation of <15 deg. can be formed, and simultaneously, the diameter, length and position of the nanotubes can be controlled. Particularly, a high frequency plasma enhances chemical vapor deposition(PECVD) is adopted, preferably, together with an acetylene-ammonia compound, and moreover, cobalt is typically used as catalytic metal, so that the above result can be obtained. |
