| 摘要 |
PURPOSE: An oxide layer etching method is provided to enhance an etch rate and to improve an etching selectivity by using an improved mixing gas. CONSTITUTION: A gate electrode(2) and a cap gate insulator(3) are sequentially formed on a silicon substrate(1). After forming source and drain regions(6) in the silicon substrate, a nitride spacer(5) is formed at both sidewalls of the gate electrode. Then, an oxide layer(7) is formed on the entire surface of the resultant structure. The oxide layer(7) is selectively etched by plasma etcher using mixed gases of CHF3, C2HF5 and C4F8. The CHF3 gas is a main source gas, and the C4H8 gas give a high etch rate.
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