| 摘要 |
PURPOSE: A cathode for CRT is provided to accurately control the amount and distribution of reducing agent in the base metal, manufacture cathode with lengthened lifespan and improve surface characteristics of material. CONSTITUTION: A cathode includes a thermal electron emission layer(10) which is formed of Ba as a main constituent, and a base metal(11) coated to the thermal electron emission layer. A predetermined amount of reducing agent is doped throughout a predetermined area into a depth(Xd) from the surface(X=0) of the base metal, wherein the doping is performed by a diffusion or ion implantation method. The reducing agent is at least one of Mg, Si or W. The ion implantation is performed to have a doping depth of 0.5 to 5.0 micron meters, and doping density of 1.0 x 10¬18/cm¬3 to 5.0x 10¬21/cm¬3.
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