WORD LINE DRIVER FOR NON-VOLATILE MEMORY WHOSE BIAS LINE IS ISOLATED AND METHOD THE SAME

摘要

PURPOSE: A word line driver for non-volatile memory whose bias line is isolated and a method the same are provided to reduce a layout size of a non-volatile memory by making a voltage bias path different each other. CONSTITUTION: A row decoder decodes a row address and outputs a word line selection signal in response to the decoded result. A bias supply unit generates a first level voltage. A plurality of level shift circuits(200a-200n) shift the first level voltage in response to a program/erasure signal permitted from outside in a first operation mode, and outputs the shifted first level voltage to the word line selected by the word line selection signal. A plurality of switching element(200a-200n) performs a switching in response to the program/erasure signal, and transmits the word line selection signal which has a second level in a second operation mode to the word line.