| 摘要 |
PURPOSE: A method for manufacturing a non-volatile memory(NVM) cell is provided to prevent polysilicon from being transformed by heat treatment in a subsequent thermal oxide process, by forming an insulation layer between floating gate polysilicon and a nitride layer so that the insulation layer functions as a buffer layer. CONSTITUTION: A tunneling oxide layer, a conductive layer, an insulation layer and a nitride layer are sequentially formed on a substrate(21). The nitride layer, the insulation layer, the conductive layer and the tunneling oxide layer are selectively eliminated to form a floating gate line. A sidewall(27) is formed on both side surfaces of the floating gate line. A source/drain region(28a,28b) is formed in the surface of the substrate at both sides of the floating gate line. A thermal oxide layer(29) is formed on the semiconductor substrate having the source/drain region.
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