发明名称 STRUCTURE OF GAS SPRAY NOZZLE FOR FORMING NITRIDE LAYER OF EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR
摘要 PURPOSE: A structure of a gas spray nozzle for forming a nitride layer is provided to minimize generation of power caused by unreacted residue gas in a process for forming the nitride layer, by simultaneously spraying two kinds of gas through the same spraying hole to make reaction regions coincide with each other. CONSTITUTION: The first gas nozzle sprays the first source gas. The second gas nozzle sprays the second source gas. Spraying holes(105) of the first and second spray nozzles for a reaction for forming a nitride layer coincide with each other so that the first and second source gas is sprayed on a reaction tube through the same spraying hole.
申请公布号 KR20010087895(A) 申请公布日期 2001.09.26
申请号 KR20000011739 申请日期 2000.03.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JONG HO
分类号 H01L21/318;(IPC1-7):H01L21/318 主分类号 H01L21/318
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