发明名称 |
STRUCTURE OF GAS SPRAY NOZZLE FOR FORMING NITRIDE LAYER OF EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR |
摘要 |
PURPOSE: A structure of a gas spray nozzle for forming a nitride layer is provided to minimize generation of power caused by unreacted residue gas in a process for forming the nitride layer, by simultaneously spraying two kinds of gas through the same spraying hole to make reaction regions coincide with each other. CONSTITUTION: The first gas nozzle sprays the first source gas. The second gas nozzle sprays the second source gas. Spraying holes(105) of the first and second spray nozzles for a reaction for forming a nitride layer coincide with each other so that the first and second source gas is sprayed on a reaction tube through the same spraying hole.
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申请公布号 |
KR20010087895(A) |
申请公布日期 |
2001.09.26 |
申请号 |
KR20000011739 |
申请日期 |
2000.03.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JONG HO |
分类号 |
H01L21/318;(IPC1-7):H01L21/318 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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