发明名称 |
PHASE SHIFT MASK AND METHOD FOR PRODUCING SAME |
摘要 |
<p>PURPOSE: To provide a high performance phase shift mask having satisfactory transmittance and aging stability even under a short wavelength light source and adaptable to the microfabrication and high integration of a semiconductor integrated circuit and a method for producing the mask. CONSTITUTION: A phase shifter for a 2nd light transmissive part is formed on a substrate transparent to light for exposure with a fluorine doped molybdenum silicide film or a fluorine doped chromium silicide film formed using SiF2 as a reactive gas.</p> |
申请公布号 |
KR20010088354(A) |
申请公布日期 |
2001.09.26 |
申请号 |
KR20010009178 |
申请日期 |
2001.02.23 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
GOHONO SHINICHI;INAZUKI YUKIO;KANEKO HIDEO;MARUYAMA TAMOTSU;OKAZAKI SATOSHI |
分类号 |
C23C14/00;C23C14/06;G03F1/32;G03F1/68;G03F1/80;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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