发明名称 PHASE SHIFT MASK AND METHOD FOR PRODUCING SAME
摘要 <p>PURPOSE: To provide a high performance phase shift mask having satisfactory transmittance and aging stability even under a short wavelength light source and adaptable to the microfabrication and high integration of a semiconductor integrated circuit and a method for producing the mask. CONSTITUTION: A phase shifter for a 2nd light transmissive part is formed on a substrate transparent to light for exposure with a fluorine doped molybdenum silicide film or a fluorine doped chromium silicide film formed using SiF2 as a reactive gas.</p>
申请公布号 KR20010088354(A) 申请公布日期 2001.09.26
申请号 KR20010009178 申请日期 2001.02.23
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 GOHONO SHINICHI;INAZUKI YUKIO;KANEKO HIDEO;MARUYAMA TAMOTSU;OKAZAKI SATOSHI
分类号 C23C14/00;C23C14/06;G03F1/32;G03F1/68;G03F1/80;H01L21/027;(IPC1-7):G03F1/08 主分类号 C23C14/00
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