VAPOR GROWTH DEVICE AND METHOD

摘要

PURPOSE: To develop a vapor growth device and method for obtaining a uniform semiconductor film where the vapor growth speed of the semiconductor film is fast and feed gas efficiency is high in the semiconductor vapor growth device, and a method for simultaneously treating a plurality of semiconductor films using a horizontal reaction pipe. CONSTITUTION: In this device and method, vapor growth is made, where the heat generation density of an upstream heater is larger than that of a downstream heater for feed gas flow. Also, gas without containing the feed gas is introduced from a fine porous part with a venting property that is arranged at a reaction pipe wall that opposes a substrate in parallel, thus preventing the reaction pipe wall from being contaminated.