| 摘要 |
PROBLEM TO BE SOLVED: To provide a device for growing a crystal, which is capable or imparting a partial distribution in a film thickness in a wafer surface on the way of growing and in a short time without need for any working process and preferably controlling position and film thickness, and further producing, e.g. multiple-wavelength surface light-emitting laser array, and to provide a method for growing the crystal. SOLUTION: A shielding plate 24 which has a slit-like opening part 23 capable of being moved within a crystal growing surface of a substrate 21 when the crystal is grown is provided between the substrate 21 and a supplying part 25 for supplying a raw material for growing the crystal. Thereby, it is possible to locally change the film thickness of the crystal to be grown in the crystal growing surface by moving the shielding plate 24 having the opening part 23 within the crystal growing surface of the substrate 21.
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