| 摘要 |
PURPOSE: A process chamber of semiconductor chemical vapor deposition equipment is provided to reduce a thickness difference between layers formed on process wafers in respective process rooms, by uniformly maintaining the quantity of process gas supplied to a plurality of process rooms inside the process chamber through a shower head. CONSTITUTION: A plurality of gas induction holes(113a,113b) corresponding to a gas exhausting hole(115) and a plurality of process rooms are formed in a process chamber(11). A plurality of diverse gas supply lines divaricate along the direction of the process rooms, connected to the gas induction hole formed in a predetermined position on an upper surface of the process chamber. A gas exhausting line(133) is connected to the gas exhausting hole formed in a predetermined position on a lower surface of the process chamber. A plurality of gas control units is mounted on the diverse gas line between the gas supply line and the plurality of gas induction hole. A plurality of shower heads(121a,121b) are mounted inside the process chamber, respectively connected to the diverse gas supply lines through the plurality of gas induction holes. A wafer(127) is settled on a plurality of substrates mounted in a lower portion of the inside of the process chamber.
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