| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve junction leakage, by performing a process for forming profiled groove isolation(PGI) after silicide is formed, so that field loss doesn't occur because the field is formed after the silicide is formed. CONSTITUTION: A salicide process is performed on a substrate(201) having a gate electrode and a source/drain region(206). A trench is formed in the substrate between the gate electrodes. The first insulation layer(209) and the second insulation layer are sequentially formed on the entire surface including the trench, and a planarization process is performed to form an isolation region of a groove type to improve step coverage with the gate electrode. A conductive material is formed on the gate electrode. The third insulation layer is formed on the entire surface of the substrate, and a contact hole is formed to expose a predetermined portion of the source/drain region. A plug is formed inside the contact hole, and a metal interconnection(213) is formed on the plug.
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