PLANARIZATION METHOD FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A planarization method for a semiconductor device is provided to reducing the quantity of spin-on-glass(SOG) flowing to a curved part, by forming a spacer on a sidewall of a lower metal interconnection to form the thin curved part. CONSTITUTION: Spacers(24) are formed on both sidewalls of the first metal interconnection(23a,23b) formed on a semiconductor substrate(20). The first interlayer dielectric(25) is covered on the resultant structure. Spin-on-glass(SOG)(28) is covered on the first interlayer dielectric. The SOG is etched back. The second interlayer dielectric(29) is deposited after the etching-back process.