发明名称 MONO-CRYSTAL PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To perform cylindrical grinding of silicon mono-crystals without a drop of the yield by reducing local breaking stresses applied to the mono- crystals when multi-crystal silicon is melted followed by pulling-up of silicon mono-crystals and then the silicon mono-crystals are to be ground into the specified diameter. SOLUTION: A polyurethane sheet 13 is pinched to serve as a buffer material, and the end face 11 of mono-crystal and a pseodo-tail 12 are adhered together using polyepoxy bonding agent and fixed to a cylindrical grinding machine, and cylindrical grinding is performed. After finishing the cylindrical grinding, the polyurethane sheet 13 is torn off using a knife, etc., and the end face 11 of mono-crystal and the pseudo-tail 12 are separated from each other.
申请公布号 JP2001259975(A) 申请公布日期 2001.09.25
申请号 JP20000081005 申请日期 2000.03.22
申请人 SUPER SILICON KENKYUSHO:KK 发明人 YAMAGISHI HIROTOSHI
分类号 B24B5/36;C30B29/06;(IPC1-7):B24B5/36 主分类号 B24B5/36
代理机构 代理人
主权项
地址