发明名称 |
Integrated circuit structure comprising capacitor element and corresponding manufacturing process |
摘要 |
A circuit structure for semiconductor devices which are integrated on a semiconductor layer is provided. The structure comprises at least one MOS device and at least one capacitor element that has a bottom and a top electrode. The MOS device has conduction terminals formed in the semiconductor layer, as well as a control terminal covered with an overlying insulating layer of unreflowed oxide. The capacitor element is formed on the unreflowed oxide layer.
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申请公布号 |
US6294798(B1) |
申请公布日期 |
2001.09.25 |
申请号 |
US19990415992 |
申请日期 |
1999.10.12 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
ZAMBRANO RAFFAELE |
分类号 |
H01L21/8242;H01L27/115;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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