发明名称 |
Hybrid microwave-frequency integrated circuit |
摘要 |
In a microwave hybrid integrated circuit a metallized recess (8) is formed on the back or face side of a board (1) of the metallization of which recess serves as a bottom plate (6) of a capacitor (5), a remaining portion (9) of the board (1) under the recess (8) serves as the dielectric of the capacitor (5), and a top plate (7) thereof is situated on the face side of the board (1) and makes part of a topological metallization pattern (2), the remaining portion of the thickness of the board (1) in the recess (8) being of 1 to 400 mum.
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申请公布号 |
US6294827(B1) |
申请公布日期 |
2001.09.25 |
申请号 |
US19980077616 |
申请日期 |
1998.05.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
IOVDALSKY VIKTOR ANATOLIEVICH;AIZENBERG EDUARD VOLFOVICH;BEIL VLADIMIR ILIICH;LOPIN MIKHAIL IVANOVICH |
分类号 |
H01L27/04;H01L21/822;H01L23/66;H01L27/02;H05K1/02;H05K1/16;H05K3/10;(IPC1-7):H01L29/40;H01L23/02;H01L23/34 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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