发明名称 Hybrid microwave-frequency integrated circuit
摘要 In a microwave hybrid integrated circuit a metallized recess (8) is formed on the back or face side of a board (1) of the metallization of which recess serves as a bottom plate (6) of a capacitor (5), a remaining portion (9) of the board (1) under the recess (8) serves as the dielectric of the capacitor (5), and a top plate (7) thereof is situated on the face side of the board (1) and makes part of a topological metallization pattern (2), the remaining portion of the thickness of the board (1) in the recess (8) being of 1 to 400 mum.
申请公布号 US6294827(B1) 申请公布日期 2001.09.25
申请号 US19980077616 申请日期 1998.05.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 IOVDALSKY VIKTOR ANATOLIEVICH;AIZENBERG EDUARD VOLFOVICH;BEIL VLADIMIR ILIICH;LOPIN MIKHAIL IVANOVICH
分类号 H01L27/04;H01L21/822;H01L23/66;H01L27/02;H05K1/02;H05K1/16;H05K3/10;(IPC1-7):H01L29/40;H01L23/02;H01L23/34 主分类号 H01L27/04
代理机构 代理人
主权项
地址