发明名称 |
Silicon wafering process flow |
摘要 |
A method of processing a semiconductor wafer sliced from a single-crystal ingot and having front and back surfaces and a peripheral edge comprises the step of plasma jet etching the wafer to reduce the sub-surface wafer damage. The method further comprises high-gloss etching the wafer by subjecting the wafer to a high-gloss etchant that smooths the wafer such that surface roughness and nonspecularly reflected light are reduced. Plasma assisted chemical etching (PACE) is performed on the wafer to improve the flatness and the thickness uniformity of the wafer. The wafer is final polished to further reduce surface roughness and nonspecularly reflected light.
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申请公布号 |
US6294469(B1) |
申请公布日期 |
2001.09.25 |
申请号 |
US20000512111 |
申请日期 |
2000.02.24 |
申请人 |
PLASMASIL, LLC |
发明人 |
KULKARNI MILIND;DESAI ANKUR |
分类号 |
H01L21/306;H01L21/3065;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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